In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
The formula for a perovskite compound is typically expressed as ABX3. These are crystalline structures that bond two cations ("A" and "B", divalent metal ion) to an anion ("X"); the "B" atoms tend to ...
A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...
Jin-Woo Han is senior scientist at NASA’s Ames Research Center in California’s Silicon Valley. Along with colleagues Meyya Meyyappan, Myeong-Lok Seol and Jungsik Kim, he has designed a nanoscale ...
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This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...
(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...
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