The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Modern circuit design is a “mixed signal” endeavor thanks to the availability of sophisticated process technologies that make available bipolar and CMOS (Complementary Metal Oxide Semiconductor), ...

Last week, it was announced that Cambridge GaN Devices (CGD) will lead a €10.3m European project (‘GaNext’) to develop fast-switching intelligent GaN power modules. But who is this small UK company ...

Engineering researchers have demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90 percent compared to state-of-the-art silicon transistors. One of the ...

The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

Microprocessors in smartphones, computers, and data centers process information by manipulating electrons through solid semiconductors, but our brains have a different system. They rely on the ...