Abstract: A 1200-V rated CoolSiC Trench MOSFET structure has excellent overall electrical characteristics due to its unique asymmetric structure. However, it is sensitive to space heavy ion radiation.
This teaching package contains a Jupyter notebook for a TCAD-to-AI workflow using Silicon MOSFET simulation data. outputs/processed_curves_long_n.csv outputs/processed_curve_matrix_n.csv ...
Abstract: An innovative framework that leverages artificial intelligence (AI) and graph representation for semiconductor device encoding in TCAD device simulation is proposed. A graph-based universal ...
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